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| SMD Type TrenchPLUS standard level FET KUK7107-55ATE TO-263 Features Integrated temperature sensor ESD protection + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Q101 compliant Standard level compatible +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage IDG = 250 iA Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V peak drain current *1 Total power dissipation Tmb = 25 gate-source clamping current (continuous) gate-source clamping current *3 FET to temperature sense diode isolation voltage Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 is; 55 V; VGS = 10 V; RGS = 50U;starting Tj = 25 Visol(FET-TSD) Tstg, Tj IDR IDRM EDS(AL)S Rth j-mb Rth j-a Symbol VDS VDGR VGS ID ID IDM Ptot IGS(CL) Rating 55 55 20 140 75 560 272 10 50 100 -55 to 175 140 75 560 460 0.55 50 A A A J K/W K/W Unit V V V A A A W mA mA V *2 unclamped inductive load; ID = 68 A;VDS *3 tp = 5 ms; = 0.01 *4 Human Body Model; C = 100 pF; R = 1.5 k 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KUK7107-55ATE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current gate-source breakdown voltage gate-source leakage current IDSS V(BR)GSS IGSS VDS = 55 V; VGS = 0 V;Tj = 25 VDS = 55 V; VGS = 0 V;Tj = 175 IG = VGS = VGS = drain-source on-state resistance forward voltage, temperature sense diode temperature coefficient temperature sense diode temperature sense diode forward voltage hysteresis total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time recovered charge RDSon VF SF Vhys Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls VSD trr Qr measured from upper edge of drain mounting base to center of die measured from source lead to source bond pad Is = 25A; VGS = 0 V IS = 20 A; dIF/dt = -100 A/is; VGS = -10 V; VDS = 30 V VDD = 30 V; RL = 1.2U;VGS = 10 V; RG = 10U VGS = 0 V; VDS = 25 V;f = 1 MHz VGS = 10 V; VDD = 44 V;ID = 25 A 1 mA;-55 Tj 175 Transistors IC Min 55 50 2 1 Typ Max Unit V V 3 4 V V 4.4 0.1 10 250 20 22 22 1000 10 . 5.8 7 14 648 658 668 V A A V nA A m m mV 10 V; VDS = 0 V;Tj = 25 10 V; VDS = 0 V;Tj = 175 VGS = 10 V; ID = 50 A;Tj = 25 VGS = 10 V; ID = 50 A;Tj = 175 IF = 250 mA IF = 250 mA;-55 125 iA IF Tj 175 -1.4 25 -1.54 -1.68 mV/K 32 116 19 50 4500 960 510 36 115 159 111 2.5 7.5 0.85 80 200 1.2 50 mV nC nC nC pF pF pF ns ns ns ns nH nH V ns nC 250 iA 2 www.kexin.com.cn |
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